By D. J. Fisher
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Extra info for A Directory of Arrhenius Parameters: Non-metals
64(eV)/kT] were explained in terms of a dissociative mechanism. Shangin: Izvestiya Akademii Nauk SSSR – Neorganicheskie Materialy, 1984, 20, 1331-3  HgTe: Ag Diffusion A radiotracer technique was used to study the diffusion of 110Ag. Khodakov: Fizika Tverdogo Tela, 1972, 14, 3072-4  HgTe: Hg Diffusion Serial sectioning was used to study 203Hg self-diffusion at 200 to 400C. Kharakhorin: Izvestiya Akademii Nauk SSSR – Neorganicheskie Materialy, 1969, 5, 2212-4  HgTe: Mn Diffusion Defect and Diffusion Forum Vol.
Profiles were determined by means of secondary-ion mass spectrometry and nuclear resonance broadening techniques. The implanted samples were subjected to annealing in Ar at 650 to 850C. Two independent Si diffusion mechanisms were observed. A concentration-independent diffusion, seen as a broadening of the initial implanted distribution, was very slow and was attributed to Si atoms that diffused interstitially. A concentration-dependent diffusivity with low solubility, was quantitatively explained in terms of the diffusion, via vacancies, of Si atoms on the Ga and As sub-lattices.
This was believed to be the first report of metalorganic vapor phase epitaxially grown HgCdTe. 2(eV)/kT). The diffusivity exhibited a marked compositional dependence, but was insensitive to changes in substrate material or crystal orientation. Autoradiography revealed that Hg exploited the defect structure in order to diffuse rapidly from the surface. Willoughby: Journal of Electronic Materials, 1993, 22, 967-71  HgCdTe: Hg Diffusion Self-diffusion of Hg was studied, using radiotracers, at between 250 and 400C.