By M. Enachescu, M. Salmeron (auth.), A. P. Bonzel (eds.)
Surface technological know-how is known as a comparatively younger clinical self-discipline, enthusiastic about the actual and chemical houses of a phenomena on fresh and lined stable surfaces, studied less than a number of stipulations. The adsorption of atoms and molecules on stable surfaces is, for instance, this kind of , attached with kind of drastic adjustments of all floor homes. An adsorption occasion is often saw in nature and located to be of technical significance in lots of commercial tactics. consequently, floor technological know-how is interdisciplinary by means of its very nature, and as such a huge middleman among basic and utilized research.
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Additional info for Adsorbed Layers on Surfaces
Exposure [arb. 0. [86Koe1] Fig. 2. See page 41. 3. (a) LEED (2×2) structure formed by S on Pt(111) when deposited at 300 K before annealing to 800 K for 30 s; (b) The (√3×√3) R30º structure formed by S deposited at 300 K before annealing to 900 K for 20 s. [99Ena] Lando lt -Börnst ein New Ser ies III/42 A3 Ref. p. 4 Adsorption of S, P, As, Se, and Sb 375 cm−1 ,ν (S - Pt) Pt (111) + H2S (sat) × 330 41 Temperature Programmed Desorption 350 K ×1000 185 K 585 cm−1, δ (S - H) 685 cm−1, δ (S - H’) 1170 cm−1, α (H2S) Intensity 2500 cm−1, ν (H2S) ×1000 155 K 585 cm−1 , ν (S - H) 3 × 10 5 cps 315 cm−1,ν (H 2S - Pt) +ν (HS - Pt) 65 cm −1 0 H2 S 1000 2000 3000 Energy loss E loss [cm −1 ] 110 K 100 H2 200 300 Temperature T [K] 400 Fig.
Technol. A 2 (1984) 847. : Surf. Sci. 140 (1984) 181. : J. Phys. C 17 (1984) 4547. : Surf. Sci. 147 (1984) 349. : Surf. Sci. 138 (1984) 191. : J. Vac. Sci. Technol. 2 (1984) 856. : Corros. Sci. 24 (1984) 259. : Surf. Sci. 148 (1984) 623. : J. Appl. Phys. 55 (1984) 931. : J. Electrochem. Soc. 131 (1984) 2361. : J. Electrochem. Soc. 131 (1984) 2366. : Appl. Phys. Lett. 45 (1984) 417. : Phys. Rev. B Condens. Matter (USA) 30 (1984) 1838. : Chem. Phys. Lett. 111 (1984) 597. : J. Vac. Sci. Technol. B 2 (1984) 276.
7 PHx per Si-dangling bond (assuming 19 dangling bonds per Si(111) in the (7×7) unit cell). 5×1014 PH3 cm-2, a molecularly-bound PH3 state exists, which does not lead to any thermally-induced surface chemistry. This PH3 species is present at a coverage corresponding to a small fraction of a monolayer. Surface Si–H species formed by thermal decomposition of PHx recombine and desorb as H2(g) at T > 700 K. At the same time, surface Si–P bonds break to yield P2(g) at T > 900 K. Using second order kinetics, the activation energy for the desorption of P2(g) from P/Si(111) was estimated to be Ed ≅ 87 kcal mol-1.